Relative probabilities of work-function and epithermal positron re-emission from silverKNIGHTS, A. P; COLEMAN, P. G.Journal of physics. Condensed matter (Print). 1995, Vol 7, Num 32, pp 6477-6482, issn 0953-8984Article

At-temperature annealing of near-surface vacancy-type defects observed by positronium formation spectroscopyCOLEMAN, P. G; MALIK, F; KNIGHTS, A. P et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 4, pp 681-688, issn 0953-8984Article

The observation of structure in the dependence of the 1 keV positron backscattering coefficient on target atomic numberKNIGHTS, A. P; COLEMAN, P. G.Journal of physics. Condensed matter (Print). 1995, Vol 7, Num 18, pp 3485-3492, issn 0953-8984Article

Thermal evolution of defects produced by implantation of H, D and He in SiliconSIMPSON, P. J; KNIGHTS, A. P; CHICOINE, M et al.Applied surface science. 2008, Vol 255, Num 1, pp 63-67, issn 0169-4332, 5 p.Article

Evolution of optical modulation using majority carrier plasma dispersion effect in SOIGARDES, F. Y; REED, G. T; KNIGHTS, A. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68980C.1-68980C.10, issn 0277-786X, isbn 978-0-8194-7073-7, 1VolConference Paper

Monolithically integrated photodetectors for optical signal monitoring in silicon waveguidesKNIGHTS, A. P; BRADLEY, J. D. B; GOU, S. H et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61250J.1-61250J.12, issn 0277-786X, isbn 0-8194-6167-9, 1VolConference Paper

CMOS compatible vertical directional coupler for 3D optical circuitsDOYLEND, J. K; KNIGHTS, A. P; BROOKS, C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, issn 0277-786X, isbn 0-8194-5989-5, 2Vol, Vol1, 59700G.1-59700G.10Conference Paper

The effect of substrate temperature on the isolation of n-type GaAs layers using MeV boron implantationAHMED, S; KNIGHTS, A. P; GWILLIAM, R et al.Semiconductor science and technology. 2001, Vol 16, Num 3, pp L17-L19, issn 0268-1242Article

Near-surface lateral vacancy migration in O⁺-implanted SiC studied by positron re-emission microscopyBURROWS, C. P; KNIGHTS, A. P; COLEMAN, P. G et al.Applied surface science. 1999, Vol 149, Num 1-4, pp 135-139, issn 0169-4332Conference Paper

Positron spectroscopy of vacancy-type defects in Si created by 5 keV B⁺ implantationMALIK, F; COLEMAN, P. G; KNIGHTS, A. P et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 46, pp 10403-10408, issn 0953-8984Conference Paper

Free carrier lifetime modification in siliconWRIGHT, N. M; THOMSON, D. J; REED, G. T et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7220, issn 0277-786X, isbn 978-0-8194-7466-7 0-8194-7466-5, 1Vol, 72206.1-72206.8Conference Paper

Observation of non-radiative de-excitation processes in silicon nanocrystalsKNIGHTS, A. P; MILGRAM, J. N; WOJCIK, J et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 5, pp 969-972, issn 1862-6300, 4 p.Conference Paper

CMOS-compatible optical rib waveguides defined by local oxidation of siliconROWE, L. K; ELSEY, M; TARR, N. G et al.Electronics Letters. 2007, Vol 43, Num 7, pp 392-393, issn 0013-5194, 2 p.Article

High performance total internal reflection type optical switches in silicon-on-insulatorTHOMSON, D; KNIGHTS, A. P; WALTERS, D et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 647713.1-647713.8, issn 0277-786X, isbn 978-0-8194-6590-0, 1VolConference Paper

Electrical conduction of silicon oxide containing silicon quantum dotsPI, X. D; ZALLOUM, O. H. Y; KNIGHTS, A. P et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 43, pp 9943-9950, issn 0953-8984, 8 p.Article

Direct high-resolution determination of vacancy-type defect profiles in ion-implanted siliconCOLEMAN, P. G; MASON, R. E; VAN DYKEN, M et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 22, pp S2323-S2330, issn 0953-8984Conference Paper

Secondary electron emission from Ag(100) stimulated by positron and electron impactKNIGHTS, A. P; COLEMAN, P. G.Applied surface science. 1995, Vol 85, pp 43-48, issn 0169-4332Conference Paper

Work function and epithermal positron emission from copperOVERTON, N; KNIGHTS, A. P; GOODYEAR, A et al.Applied surface science. 1995, Vol 85, pp 54-58, issn 0169-4332Conference Paper

Direct observation of indium precipitates in silicon following high dose ion implantationDUDECK, K. J; HUANTE-CERON, E; KNIGHTS, A. P et al.Semiconductor science and technology. 2013, Vol 28, Num 12, issn 0268-1242, 125012.1-125012.12Article

Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion implantation into SiO₂HYLTON, N. P; CROWE, I. F; KNIGHTS, A. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7606, issn 0277-786X, isbn 978-0-8194-8002-6 0-8194-8002-9, 1Vol, 760604.1-760604.7Conference Paper

Observation of vacancy defects at silicon grain boundaries formed via suppressed solid phase epitaxyDUDECK, K. J; WALTERS, W. D; KNIGHTS, A. P et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 5, issn 0022-3727, 055102.1-055102.7Article

Coupled luminescence centres in erbium-doped silicon rich silicon oxide thin filmsBLAKIE, D. E; ZALLOUM, O. H. Y; WOJCIK, J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63433S.1-63433S.11, issn 0277-786X, isbn 0-8194-6428-7Conference Paper

Erbium doped silicon rich silicon oxide luminescent thin films deposited by ECR-PECVDBLAKIE, D; ZALLOUM, O. H. Y; WOJCIK, J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, issn 0277-786X, isbn 0-8194-5989-5, 2Vol, Vol1, 597013.1-597013.12Conference Paper

Development of a novel tool for semiconductor process controlGWILLIAM, R. M; KNIGHTS, A. P; WENDLER, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 80, Num 1-3, pp 60-64, issn 0921-5107Conference Paper

Enhancement of depth sensitivity in slow positron implantation spectroscopy of SiCOLEMAN, P. G; KNIGHTS, A. P.Applied surface science. 1999, Vol 149, Num 1-4, pp 82-86, issn 0169-4332Conference Paper